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SMAJ250A Rectifier Diode 1N5821 diode Silicon Avalanche Diodes

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SMAJ250A Rectifier Diode 1N5821 diode Silicon Avalanche Diodes

Model Number : SMAJ250A

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8700pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : 405V Clamp 1A Ipp Tvs Diode Surface Mount DO-214AC (SMA)

Operating junction temperature : -55 to +150 ℃

storage temperature : -55 to +150 ℃

Typical thermal resistance, junction to lead : 30 ℃/W

Typical thermal resistance, junction to ambient : 120 ℃/W

Weight : 0.002oz., 0.064g

Package : DO-214AC(SMA)

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SMAJ5.0 thru 440CA

Surface Mount Transient Voltage Suppressors

Peak Pulse Power 400W Stand Off Voltage 5.0 to 440V

Features

Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4)
Low profile package with built-in strain relief for surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
400W peak pulse power capability with a 10/1000us wave- form, repetition rate (duty cycle): 0.01% (300W above 78V)
Very fast response time
High temperature soldering guaranteed: 250oC/10 seconds at terminals

Mechanical Data

Case: JEDEC DO-214AC(SMA) molded plastic over passivated chip
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation
Mounting Position: Any
Weight: 0.002oz., 0.064g

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions.

Maximum Ratings and Thermal Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameter	Symbol	Value	Unit
Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1)	P_PPM	400	W
Peak pulse current with a 10/1000us waveform ⁽¹⁾	I_PPM	See Next Table	A
Peak forward surge current, 8.3ms single half sine-wave uni-directional only ⁽²⁾	I_FSM	40	A
Typical thermal resistance, junction to ambient ⁽³⁾	R_θJA	120	℃/W
Typical thermal resistance, junction to lead	R_θJL	30	℃/W
Operating junction and storage temperature range	T_J, T_STG	-55 to +150	℃

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25℃ per Fig.

2. Rating is 300W above 78V 2. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

3. Mounted on minimum recommended pad layout

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

SD12CT1G	12164	ON	10+	SOD323
RB500V-40TE-17	35400	ROHM	16+	SOD323
RB551V-30TE-17	66600	ROHM	16+	SOD323
RF051VA2S	33000	ROHM	16+	SOD323
RSX071VA-30	9000	ROHM	13+	SOD323
UDZS12B	30000	ROHM	15+	SOD323
UDZSTE-1715B	49800	ROHM	15+	SOD323
UDZSTE-1720B	60000	ROHM	16+	SOD323
UDZSTE-17-5.6B	36600	ROHM	14+	SOD323
UDZVTE-1720B	66000	ROHM	16+	SOD323
SD05.TCT	32000	SEMTECH	11+	SOD323
RB160M-40TR	21500	ROHM	15+	SOD-214
PTVS24VS1UR	8168		16+	SOD123W
PMEG6010CEH	17582		15+	SOD123F
SSM5817SLPT	15548	CHENMKO	16+	SOD123
SM4007	58800	DIOTEC	13+	SOD123
SM5819PL-TP	63000	MCC	16+	SOD123
RS1010FL-S T/R	9000	MURATA	15+	SOD123
US1MW	45600	PANJIT	16+	SOD123
RB060M-30	15980	ROHM	16+	SOD123
RB160M-60TR	42500	ROHM	14+	SOD123
RR264M-400	21000	ROHM	11+	SOD123
RSX101VA-30	138000	ROHM	16+	SOD123
S-123T	18060	SEMITEC	14+	SOD123
SS0520T/R	37200	SMA FSC	13+	SOD123
STPS0520Z	29500	ST	05+	SOD123
STPS0560Z	55000	ST	16+	SOD123
RB160L-40TE25	81000	ROHM	16+	SOD-106
RB160L-90	46000	ROHM	16+	SOD-106
SGA-2186Z	16588	RFMD	16+	SMT86

Product Tags:

diode rectifier circuit

signal schottky diode

SMAJ250A Rectifier Diode 1N5821 diode Silicon Avalanche Diodes Images

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