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BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage

ChongMing Group (HK) Int'l Co., Ltd
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BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage

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Model Number : BYV32EB-200

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Diode Array 1 Pair Common Cathode 200 V 20Diode Array 1 Pair CoA Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

repetitive peak reverse voltage : 200 V

crest working reverse voltage : 200 V

reverse voltage : 200 V

repetitive peak forward current : 20 A

repetitive peak reverse current : 0.2 A

storage temperature : -40 to 150 °C

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BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage

General description

Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic package.

Features and benefits

  • High reverse voltage surge capability „
  • High thermal cycling performance „
  • Low thermal resistance „
  • Soft recovery characteristic minimizes power consuming oscillations „
  • Surface-mountable package „
  • Very low on-state loss

Applications „

Output rectifiers in high-frequency switched-mode power supplies

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 200 V
VRWM crest working reverse voltage - 200 V
VR reverse voltage DC - 200 V
IO(AV) average output current square-wave pulse; δ = 0.5; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 - 20 A
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; per diode - 20 A
IFSM non-repetitive peak forward current tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 137 A
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 125 A
IRRM repetitive peak reverse current δ = 0.001; tp = 2 µs - 0.2 A
IRSM non-repetitive peak reverse current tp = 100 µs - 0.2 A
Tstg storage temperature -40 150 °C
Tj junction temperature - 150 °C
VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV

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Product Tags:

diode rectifier circuit

      

signal schottky diode

      
China BYV32EB-200 Dual rugged ultrafast Rectifier Diode 200 V repetitive peak reverse voltage wholesale

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