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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

Model Number : NDT456P

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 6900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : P-Channel 30 V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4

Drain-Source Voltage : -30 V

Gate-Source Voltage : ±20 V

Operating and Storage Temperature : -65 to 150 °C

Package : SOT-223

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NDT456P P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Features

-7.5 A, -30 V. R_DS(ON)= 0.030 W @ V_GS = -10 V
R_DS(ON) = 0.045 W @ VGS = -4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

Symbol	Parameter	NDT456P	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±7.5	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	±20	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3	W
		1.1	W
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150	°C

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Product Tags:

power mosfet ic

multi emitter transistor

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