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BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

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BCP54 Power Mosfet IC Transistor NPN General Purpose Amplifier Transistors

Model Number : BCP54

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 45 V 1.5 A 1.5 W Surface Mount SOT-223-4

Collector-Emitter Voltage : 45 V

Collector-Base Voltage : 45 V

Emitter-Base Voltage : 5.0 V

Collector Current - Continuous : 1.5 A

Operating and Storage Junction Temperature : -55 to +150 °C

Total Device Dissipation : 1.5 W

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BCP54 NPN General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.

Absolute Maximum Ratings* T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	45	V
V_CBO	Collector-Base Voltage	45	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	1.5	A
T_J, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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Product Tags:

multi emitter transistor

silicon power transistors

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